1 INTRODUCTION
1.1 Study Assumptions? and Market Definition?
1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS
4.1 Market Overview
4.2 Industry Attractiveness - Porter's Five Forces Analysis
4.2.1 Bargaining Power of Suppliers
4.2.2 Bargaining Power of Buyers/Consumers
4.2.3 Threat of New Entrants
4.2.4 Threat of Substitute Products
4.2.5 Intensity of Competitive Rivalry
4.3 Industry Value Chain / Supply Chain Analysis
4.4 Impact of COVID-19 on the Market
4.5 Market Drivers?
4.5.1 Rising Demand for High-energy and Power-efficient Devices in the Automotive and Electronics Segment
4.5.2 Demand for Green Energy Power Generation Drives
4.6 Market Restraint?
4.6.1 Rising Demand for Integrated Circuits

5 MARKET SEGMENTATION
5.1 Construction Type
5.1.1 MOSFET
5.1.1.1 MOSFET - BY MATERIAL
5.1.1.1.1 Si MOSFET
5.1.1.1.2 SiC MOSFET
5.1.1.2 MOSFET - BY END USER
5.1.1.2.1 Consumer Electronics
5.1.1.2.2 Medical
5.1.1.2.3 Automotive
5.1.1.2.4 Computing and Storage
5.1.1.2.5 Industrial
5.1.1.2.6 Network and Telecom
5.1.1.2.7 Other End Users
5.1.2 IGBT - Overview and Market Estimates
5.1.2.1 Automotive
5.1.2.2 Energy (Production and Distribution)
5.1.2.3 Transportation
5.1.2.4 Industrial
5.1.2.5 Commercial
5.1.2.6 Bipolar Transistor
5.1.2.7 Thyristor
5.1.2.8 Rectifier
5.1.2.9 Other Types (Junction Gate Field Effect Transistor (JFET), GaN HEMT, Triacs, Varactor Diodes, TVS Diodes, and Zener Diodes)
5.2 End-user Vertical
5.2.1 Automotive
5.2.2 Consumer Electronics
5.2.3 Communication
5.2.4 Industrial
5.2.5 Other End-user Verticals
5.3 Geography
5.3.1 Americas
5.3.2 Europe
5.3.3 Asia-Pacific (China, Japan, Taiwan)
5.3.4 Rest of the World

6 COMPETITIVE LANDSCAPE
6.1 Company Profiles
6.1.1 ABB Ltd
6.1.2 On Semiconductor Corporation (Fairchild Semiconductor)
6.1.3 Infineon Technologies AG
6.1.4 STMicroelectronics NV
6.1.5 Toshiba Electronic Devices & Storage Corporation
6.1.6 NXP Semiconductors NV (To be Acquired by Qualcomm)
6.1.7 Diodes Incorporated
6.1.8 Nexperia BV
6.1.9 D3 Semiconductor LLC
6.1.10 Eaton Corporation PLC
6.1.11 Hitachi Ltd
6.1.12 Mitsubishi Electric Corp.
6.1.13 Fuji Electric Corp.
6.1.14 Taiwan Semiconductor Manufacturing Company Ltd
6.1.15 Vishay Intertechnology Inc.
6.1.16 Renesas Electronics Corporation
6.1.17 ROHM Co. Ltd
6.1.18 Microsemi Corporation (Microchip Technology)
6.1.19 Qorvo Inc. 
6.1.20 Cree Inc.
6.1.21 General Electric Company
6.1.22 Littelfuse Inc
6.1.23 United Silicon Carbide Inc.

7 INVESTMENT ANALYSIS

8 MARKET OPPORTUNITIES AND FUTURE TRENDS

Companies Mentioned
 - ABB Ltd
- On Semiconductor Corporation (Fairchild Semiconductor)
- Infineon Technologies AG
- STMicroelectronics NV
- Toshiba Electronic Devices & Storage Corporation
- NXP Semiconductors NV (To be Acquired by Qualcomm)
- Diodes Incorporated
- Nexperia BV
- D3 Semiconductor LLC
- Eaton Corporation PLC
- Hitachi Ltd
- Mitsubishi Electric Corp.
- Fuji Electric Corp.
- Taiwan Semiconductor Manufacturing Company Ltd
- Vishay Intertechnology Inc.
- Renesas Electronics Corporation
- ROHM Co. Ltd
- Microsemi Corporation (Microchip Technology)
- Qorvo Inc. 
- Cree Inc.
- General Electric Company
- Littelfuse Inc
- United Silicon Carbide Inc.